STP6623 p channel enhancement mode mosfet 18.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP6623 2010. v1 scription stp6621 is the pchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize onstate resistance. these devices are particularly suited for low voltage application, no teook power management ane ther battery powered circuits where highside witching. pin configuration sop-8 part marking sop-8 feature 60v/10.0a, r ds(on) = 23m (typ.) @v gs =10v 60v/8.0a, r ds(on) = 28m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sop8 package design
STP6623 p channel enhancement mode mosfet 18.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP6623 2010. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 60 v gatesource voltage v gss 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 18.0 11.0 a pulsed drain current i dm 50 a continuous source current (diode conduction) i s 4.3 a power dissipation t a =25 t a =70 p d 3.1 2.0 w operation junction temperature t j 55/150 storgae temperature range t stg 55/150 thermal resistancejunction to ambient r ja 70 /w
STP6623 p channel enhancement mode mosfet 18.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP6623 2010. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 60 v gate threshold voltage v gs(th) v ds =v gs ,i d =250 ua 0.8 2.5 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =48v,v gs =0v 1 ua v ds =48v,v gs =0v t j =85 10 onstate drain current i d(on) v ds= 5v,v gs =10v 18 a drainsource onresistance r ds(on) v gs =10v, i d =10a v gs =4.5v, i d =8a 0.023 0.028 0.030 0.038 forward tran conductance g fs v ds =5v,i d =6.7a 18 s diode forward voltage v sd i s =2.3a,v gs =0v 0.7 1.0 v dynamic total gate charge q g v ds =30v,v gs =10 i d 6.2a 47 55 nc gatesource charge q gs 9.2 gatedrain charge q gd 9.3 input capacitance ciss v ds =30v,v gs =0v f=1mhz 2410 pf output capacitance coss 179 reverse transfercapacitance crss 125 turnon time t d(on) tr v ds =30v,r l =4.7 v gs =10v,r gen =3 9.8 ns 6.1 turnoff time t d(off) tf 44 12.9
STP6623 p channel enhancement mode mosfet 18.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP6623 2010. v1 typical characterictics
STP6623 p channel enhancement mode mosfet 18.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP6623 2010. v1 typical characterictics
STP6623 p channel enhancement mode mosfet 18.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP6623 2010. v1 sop-8 package outline
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